The 63rd JSAP Spring Meeting, 2016

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)

Masashi Kato(NITech), Mitsuo Okamoto(AIST), Mitsuru Sometani(Fuji Electric)

2:15 PM - 2:30 PM

[20p-H101-5] Improvement of analysis on surface recombination velocities for 4H-SiC

〇Kimihiro Kohama1, Masashi Kato1, Ichimura Masaya1 (1.NIT)

Keywords:semiconductor,SiC,surface recombination velocity