[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-H101-9] Proposal of local DLTS by super-higher-order scanning nonlinear dielectric microscopy and its application for evaluation of SiO₂/SiC interface

〇Norimichi Chinone¹, Ryoji Kosugi², Yasunori Tanaka³, Shinsuke Harada², Hajime Okumura², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST, 3.Government of Japan)

Keywords:MOS interface,Scanning Probe Microscopy,DLTS

Techniques for evaluating MOS interface of SiC is indespensable to enhance SiC device charecteristics. In this study, local DLTS using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM), which is one of SPM family, will be proposed. We will show an method for analyzing transient capacitance responses and some results obtained from SiC wafers with 45-nm-thick thermal oxide layer.