[20p-H111-1~9] Frontiers of new functional oxides -more oxide, beyond oxide-

[20p-H111-2] High quality oxide films fabricated by gas source MBE for exploring oxide electronics

〇Kei Takahashi^1,2, Yuya Matsubara^1,3, Tomoki Murata³, Mohammad Bahramy^1,3, Yusuke Kozuka³, Denis Maryenko¹, Joseph Falson³, Atsushi Tsukazaki⁴, Yoshinori Tokura^1,3, Masashi Kawasaki^1,3 (1.RIKEN CEMS, 2.JST, PREST, 3.Univ. of Tokyo, 4.IMR, Tohoku Univ.)

Keywords:MBE,Oxide film,Quantum Hall effect

In this study, as a new growth method for high quality oxide thin films, gas source molecular beam epitaxy (gas source MBE) system with semiconductor laser heating for substrate was developed. All results such as observation of quantum Hall effect in delta doped SrTiO₃ should derive from the higher crystalline quality of gas source MBE films than the samples fabricated by other growth methods, indicating that the MBE system is a poweful tool to extract the potential of oxide films.