The 63rd JSAP Spring Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20p-H112-1~12] 15.5 Group IV crystals and alloys

Sun. Mar 20, 2016 1:15 PM - 4:30 PM H112 (H)

Keisuke Arimoto(Univ. of Yamanashi)

3:15 PM - 3:30 PM

△ [20p-H112-8] Epitaxial growth of in situ P-doped Ge thin films by MOCVD

〇Shinichi IKE1,2, Yosuke SHIMURA1, Wakana TAKEUCHI1, Osamu NAKATSUKA1, Shigeaki ZAIMA1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ.)

Keywords:Germanium,N-type doping,MOCVD