[20p-H113-1~13] 15.8 Crystal evaluation, impurities and crystal defects

△ [20p-H113-2] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Capability of projected range for Hydrogen-

〇Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO Corp.)

Keywords:silicon wafer,carbon cluster ion implantation,hydrogen diffusion behavior

We demonstrate that the projected range of carbon cluster ion implantation trap a hydrogen after epitaxial growth. Analysis of hydrogen in projected range is important to the characteristic understanding of the carbon cluster ion implanted wafer.
Therefore, we tried to derive desorption activation energy of hydrogen from a projected range. As the result, a value of 0.76 eV was derived. This value is larger than diffusive activation energy 0.48 eV of hydrogen and is smaller than Si-H binding energy 3-4 eV. We assume that hydrogen is bound to the complex of the projected range.