[20p-H121-1~24] 15.4 III-V-group nitride crystals

[20p-H121-10] Lateral satellite peaks originating from confined misfit dislocations in HRXRD study of AlN layer grown on step-height-controlled SiC substrates

〇Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

Keywords:Nitride semiconductor,X-ray diffraction,Silicon Carbide

Lateral satellite peaks in XRD are often observed from lattice-relaxed heterostructures which include long misfit dislocations confined at their interfaces, such as AlAs/GaAs or PbSe/PbTe. On the other hand, III-nitride semiconductors are usually grown on strongly lattice-mismatched substrates, such as sapphire or Si, and such a confinement of misfit dislocations is quite difficult. In this study, we firstly report the observation of lateral satellite peaks among nitride semiconductors in a high-quality AlN layer grown on a step-height-controlled SiC substrate.