Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

△ [20p-H121-1] Characterization of GaN layer using THz ellipsometry and its verification by cross-sectional observation

〇KOHEI TACHI¹, Shiho Asagami¹, Takashi Fujii^1,3, Tsutomu Araki¹, Yasushi Nanishi¹, Takeshi Nagashima², Toshiyuki Iwamoto³, Yukinori Sato³, Naotake Morita⁴, Ryuichi Sugie⁴, Satoshi Kamiyama⁵ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP, 4.TRC, 5.Meijo Univ.)

1:30 PM - 1:45 PM

[20p-H121-2] Comparison of electrical properties for n-GaN on sapphire between THz ellipsometry and Hall effect measurement

〇(B)Shiho Asagami¹, Kohei Tachi¹, Takashi Fujii^1,3, Tsutomu Araki¹, Yasushi Nanishi¹, Takeshi Nagashima², Toshiyuki Iwamoto³, Yukinori Sato³, Naotake Morita⁴, Ryuichi Sugie⁴, Satoshi Kamiyama⁵ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP, 4.TRC, 5.Meijo Univ.)

1:45 PM - 2:00 PM

[20p-H121-3] Theoretical Investigation of Relationship between SiC/GaN Interface Structures and Bandoffset

〇Eiji Kojima¹, Kentaro Endo¹, Hiroki Shirakawa¹, Masaaki Araidai¹, Yasuhiro Ebihara², Takashi Kanemura², Shoichi Onda², Kenji Shiraishi¹ (1.Nagoya Univ., 2.DENSO)

2:00 PM - 2:15 PM

[20p-H121-4] Influence of Threading Dislocation on Interface between Insulator and GaN

〇Toshiya Yokogawa¹, Yudai Yamamoto¹, Takuya Kakoi¹, Takanori Nishihira¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)

2:15 PM - 2:30 PM

[20p-H121-5] Growth of group III nitrides on hafnium by pulsed excitation deposition

Heryon Kim¹, 〇Jitsuo Ohta^1,2, Shigeru Inoue¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,3 (1.IIS, Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

2:30 PM - 2:45 PM

[20p-H121-6] High-pressure synthesis of pseudo-Ⅲ-Ⅴnitride semiconductor of ZnSnN₂.

〇Fumio Kawamura¹, Motoharu Imai¹, Takashi Taniguchi¹, Naoomi Yamada² (1.NIMS, 2.Chubu Univ.)

2:45 PM - 3:00 PM

▼ [20p-H121-7] Growth and Characterizations of a pseudo-III-nitride ZnSnN₂

〇(DC)Xiang Cao¹, Koji Umezome¹, Fumio Kawamura², Yoshihiro Ninomiya¹, Takashi Taniguchi², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS)

3:00 PM - 3:15 PM

[20p-H121-8] Development of low concentration doping technique for nitride semiconductors

〇Yasuaki Arakawa¹, Kohei Ueno¹, Jitsuo Ohta^1,2, Hiroshi Fujioka^1,3 (1.IIS, The Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

3:30 PM - 3:45 PM

[20p-H121-9] Observation of strain relaxation in MBE-grown nitride semiconductors by in situ synchrotron X-ray diffraction

〇Takuo Sasaki¹, Ryota Deki², Fumitaro Ishikawa³, Tomohiro Yamaguchi⁴, Masamitu Takahasi^1,2 (1.JAEA, 2.Univ. Hyogo, 3.Ehime Univ., 4.Kogakuin Univ.)

3:45 PM - 4:00 PM

[20p-H121-10] Lateral satellite peaks originating from confined misfit dislocations in HRXRD study of AlN layer grown on step-height-controlled SiC substrates

〇Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

4:00 PM - 4:15 PM

[20p-H121-11] Energetics of GaN and AlN thin films on SiC substrate: a first-principles study

〇Toru Akiyama¹, Harunobu Nakane¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

4:15 PM - 4:30 PM

[20p-H121-12] Microscopic characterization of spiral Growth of GaN by Conductive-AFM

〇Kazukiu Komura¹, Aranami Manato¹, Araki Tsutomu¹, Nanishi Yasushi¹, Akasaka Tetsuya² (1.Ritsumeikan.Univ., 2.NTT Basic Research Lab.)

4:30 PM - 4:45 PM

[20p-H121-13] Effect of applying substrate bias for ion-beam-assisted MBE growth of c-BN thin films

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹, Kazuhide Kumakura¹ (1.NTT BRL)

4:45 PM - 5:00 PM

[20p-H121-14] Selective area growth of GaN nanocolumns on graphene

〇yuta konno¹, Hiroaki Hayashi¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Reserch Center)

5:00 PM - 5:15 PM

[20p-H121-15] Eu concentration dependence of Eu doped GaN nanocolumns grown by rf-plasma-assisted molecular beam epitaxy

〇(M1)Tomohiko Imanishi¹, Hiroto Sekiguchi¹, Satoshi Nishikawa¹, Kohei Ozaki¹, Keisuke Yamane¹, Hiroshi Okada^2,3, Katsumi Kishino³, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.EIIRIS, 3.Sophia Univ.)

5:15 PM - 5:30 PM

[20p-H121-16] Evaluation of surface diffusion lengths during InGaN growth by rf-MBE

〇Kohei Date¹, Hiroto Sekiguchi¹, Ai Yanagihara², Keisuke Yamane¹, Hiroshi Okada¹, Akihiro Wakahara¹, Katsumi Kishino² (1.Toyohashi Univ. of Tech., 2.Sophia Univ.)

5:45 PM - 6:00 PM

△ [20p-H121-17] Localized Emission from InGaN Islands Formed in N-polar InGaN/GaN LEDs

〇Tomoyuki Tanikawa¹, Kanako Shojiki¹, Ryuji Katayama¹, Shigeyuki Kuboya¹, Takashi Matsuoka¹ (1.IMR, Tohoku Univ.)

6:00 PM - 6:15 PM

△ [20p-H121-18] Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED structure

〇(DC)Kazuaki Tsuchiyama¹, Shu Utsunomiya¹, Shota Nakagawa¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

6:15 PM - 6:30 PM

△ [20p-H121-19] Stress Variation in GaN layers grown on Si substrate by manufacturing process of LEDs

〇Aoi Okada¹, Kenjiro Uesugi¹, Shigeya Kimura¹, Tatsunori Sakano¹, Hisashi Yoshida¹, Shinya Nunoue¹ (1.Toshiba Corp.)

6:30 PM - 6:45 PM

[20p-H121-20] The evaluation of internal quantum efficiency of LEDs by measurements of photocurrent

〇(M2)Shigeyoshi Usami¹, Yoshio Honda^1,3, Hiroshi Amano^1,2,3 (1.Nagoya Univ., 2.ARC, 3.CIRFE)

6:45 PM - 7:00 PM

△ [20p-H121-21] Low resistivity Ohmic contact V-based electrode contributed by using Si₃N₄for high AlN molar fraction n-type AlGaN

〇Noriaki Nagata¹, Kazuki Mori¹, Kunihiro Takeda¹, Toshiki Kusafuka¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac. Sci.&Tech., Meijo Univ, 2.Akasaki Research Center., Nagoya Univ.)

7:00 PM - 7:15 PM

[20p-H121-22] Improved properties in InGaN-based solar cells by surface passivation process

〇Tomoki Kabata¹, TsuTsumi Tatuya¹, Mori Takuma¹, Kato Masashi¹, Miyoshi Makoto¹, Egawa Takashi¹ (1.Nagoya Inst of Tech)

7:15 PM - 7:30 PM

▼ [20p-H121-23] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

〇Li-wen SANG¹, kexiong Zhang¹, Masatomo Sumiya¹, Meiyong Liao¹, Yasuo Koide¹ (1.NIMS)

7:30 PM - 7:45 PM

[20p-H121-24] Fabrication of GaN with reverse mesa pattern by inductive coupled plasma reactive ion etching

〇(M1)Norihiro Itagaki¹, Nagatoshi Kei¹, Okada Narihito¹, Inomoto Ryou¹, Nishimiya Tomoharu², Matsuo Humiharu², Tadatomo Kazuyuki¹ (1.Yamaguchi Univ., 2.SAMCO Corp.)

Session information

[20p-H121-1~24] 15.4 III-V-group nitride crystals

△ [20p-H121-1] Characterization of GaN layer using THz ellipsometry and its verification by cross-sectional observation

[20p-H121-2] Comparison of electrical properties for n-GaN on sapphire between THz ellipsometry and Hall effect measurement

[20p-H121-3] Theoretical Investigation of Relationship between SiC/GaN Interface Structures and Bandoffset

[20p-H121-4] Influence of Threading Dislocation on Interface between Insulator and GaN

[20p-H121-5] Growth of group III nitrides on hafnium by pulsed excitation deposition

[20p-H121-6] High-pressure synthesis of pseudo-Ⅲ-Ⅴnitride semiconductor of ZnSnN₂.

▼ [20p-H121-7] Growth and Characterizations of a pseudo-III-nitride ZnSnN₂

[20p-H121-8] Development of low concentration doping technique for nitride semiconductors

[20p-H121-9] Observation of strain relaxation in MBE-grown nitride semiconductors by in situ synchrotron X-ray diffraction

[20p-H121-10] Lateral satellite peaks originating from confined misfit dislocations in HRXRD study of AlN layer grown on step-height-controlled SiC substrates

[20p-H121-11] Energetics of GaN and AlN thin films on SiC substrate: a first-principles study

[20p-H121-12] Microscopic characterization of spiral Growth of GaN by Conductive-AFM

[20p-H121-13] Effect of applying substrate bias for ion-beam-assisted MBE growth of c-BN thin films

[20p-H121-14] Selective area growth of GaN nanocolumns on graphene

[20p-H121-15] Eu concentration dependence of Eu doped GaN nanocolumns grown by rf-plasma-assisted molecular beam epitaxy

[20p-H121-16] Evaluation of surface diffusion lengths during InGaN growth by rf-MBE

△ [20p-H121-17] Localized Emission from InGaN Islands Formed in N-polar InGaN/GaN LEDs

△ [20p-H121-18] Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED structure

△ [20p-H121-19] Stress Variation in GaN layers grown on Si substrate by manufacturing process of LEDs

[20p-H121-20] The evaluation of internal quantum efficiency of LEDs by measurements of photocurrent

△ [20p-H121-21] Low resistivity Ohmic contact V-based electrode contributed by using Si₃N₄for high AlN molar fraction n-type AlGaN

[20p-H121-22] Improved properties in InGaN-based solar cells by surface passivation process

▼ [20p-H121-23] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

[20p-H121-24] Fabrication of GaN with reverse mesa pattern by inductive coupled plasma reactive ion etching

Authentication

Session information

[20p-H121-1~24] 15.4 III-V-group nitride crystals

△ [20p-H121-1] Characterization of GaN layer using THz ellipsometry and its verification by cross-sectional observation

▼ [20p-H121-7] Growth and Characterizations of a pseudo-III-nitride ZnSnN2

△ [20p-H121-17] Localized Emission from InGaN Islands Formed in N-polar InGaN/GaN LEDs

△ [20p-H121-18] Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED structure

△ [20p-H121-19] Stress Variation in GaN layers grown on Si substrate by manufacturing process of LEDs

△ [20p-H121-21] Low resistivity Ohmic contact V-based electrode contributed by using Si3N4 for high AlN molar fraction n-type AlGaN

▼ [20p-H121-23] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

Authentication

▼ [20p-H121-7] Growth and Characterizations of a pseudo-III-nitride ZnSnN₂

△ [20p-H121-18] Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED structure

△ [20p-H121-21] Low resistivity Ohmic contact V-based electrode contributed by using Si₃N₄for high AlN molar fraction n-type AlGaN