Noriaki Nagata

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

6:45 PM - 7:00 PM

△ [20p-H121-21] Low resistivity Ohmic contact V-based electrode contributed by using Si₃N₄for high AlN molar fraction n-type AlGaN

〇Noriaki Nagata¹, Kazuki Mori¹, Kunihiro Takeda¹, Toshiki Kusafuka¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac. Sci.&Tech., Meijo Univ, 2.Akasaki Research Center., Nagoya Univ.)