Kohei Date

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

5:15 PM - 5:30 PM

[20p-H121-16] Evaluation of surface diffusion lengths during InGaN growth by rf-MBE

〇Kohei Date¹, Hiroto Sekiguchi¹, Ai Yanagihara², Keisuke Yamane¹, Hiroshi Okada¹, Akihiro Wakahara¹, Katsumi Kishino² (1.Toyohashi Univ. of Tech., 2.Sophia Univ.)

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