[20p-H121-1~24] 15.4 III-V-group nitride crystals

[20p-H121-15] Eu concentration dependence of Eu doped GaN nanocolumns grown by rf-plasma-assisted molecular beam epitaxy

〇(M1)Tomohiko Imanishi¹, Hiroto Sekiguchi¹, Satoshi Nishikawa¹, Kohei Ozaki¹, Keisuke Yamane¹, Hiroshi Okada^2,3, Katsumi Kishino³, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.EIIRIS, 3.Sophia Univ.)

Keywords:Eu,nanocolumn

Eu doped GaN (GaN:Eu) shows a sharp line emission and thermal stability of the emission wavelength. To improve the optical properties, GaN:Eu nanocolumns were grown on GaN nanocolumn platform with high crystalline quality by rf-plasma-assisted molecular beam epitaxy. Although it was revealed that an increase of Eu concentration brought about the polycrystalline growth, photoluminescence (PL) intensity from Eu³⁺ monotonically increased with increasing Eu concentration without concentration quenching, which suggests that the nanocolumn crystal is a valuable way to develop the novel optical devices utilizing GaN:Eu.