Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO<sub>2</sub>/GaN-LED structure

Kazuaki Tsuchiyama; Shu Utsunomiya; Shota Nakagawa; Keisuke Yamane; Hiroto Sekiguchi; Hiroshi Okada; Akihiro Wakahara

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

6:00 PM - 6:15 PM

△ [20p-H121-18] Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED structure

〇(DC)Kazuaki Tsuchiyama¹, Shu Utsunomiya¹, Shota Nakagawa¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

Keywords:Monolithic integration,Wafer bonding

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Presentation information

[20p-H121-1~24] 15.4 III-V-group nitride crystals

△ [20p-H121-18] Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED structure

△ [20p-H121-18] Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED structure