The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

6:30 PM - 6:45 PM

[20p-H121-20] The evaluation of internal quantum efficiency of LEDs by measurements of photocurrent

〇(M2)Shigeyoshi Usami1, Yoshio Honda1,3, Hiroshi Amano1,2,3 (1.Nagoya Univ., 2.ARC, 3.CIRFE)

Keywords:Internal quantum efficiency,photocurrent

Internal quantum efficiency of the LED is one of the important parameter to evaluate the performance of the light-emitting layer. Several methods have been proposed to analyze this parameter.
However, in the LED, photovoltaic effect is expressed by the pn junction formation, which make difficult to evaluate the IQE because the electromotive force and carrier leakage amount are sensitive to the excitation intensity. In this study, we propose an effective method by measuring the photocurrent which also leads to evaluate IQE in the LED.