Influence of Threading Dislocation on Interface between Insulator and GaN

Toshiya Yokogawa; Yudai Yamamoto; Takuya Kakoi; Takanori Nishihira; Narihito Okada; Kazuyuki Tadatomo

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

2:00 PM - 2:15 PM

[20p-H121-4] Influence of Threading Dislocation on Interface between Insulator and GaN

〇Toshiya Yokogawa¹, Yudai Yamamoto¹, Takuya Kakoi¹, Takanori Nishihira¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)

Keywords:Nitride semiconductor,Insulator,Electrical property

We present influence of threading dislocation on interface between insulator and GaN. Sapphire, bulk GaN with low dislocation density and GaN layer grown by epitaxially lateral overgrowth method were used to investigate the influence in structural and electrical properties of insulater/GaN inteface.