[20p-H121-1~24] 15.4 III-V-group nitride crystals

[20p-H121-6] High-pressure synthesis of pseudo-Ⅲ-Ⅴnitride semiconductor of ZnSnN₂.

〇Fumio Kawamura¹, Motoharu Imai¹, Takashi Taniguchi¹, Naoomi Yamada² (1.NIMS, 2.Chubu Univ.)

Keywords:ZnSnN2,metathesis reaction,bulk crystal

Altghouh some theoritical studies have shown that the ZnSnN₂ crystal in which di- and tetra- valent cation displaces the tri-valent cation site in wurzite structure has direct-band gap with 1.4 eV same as III-V nitride semiconductor, high-quality crystal has not been synthesized.
In this study, we succesfully synthesized high-crystalinity ZnSnN₂ crystals using methathesis reaction, whose crystallinity was enough for stractural analysis.