The 63rd JSAP Spring Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Tsutomu Araki(Ritsumeikan Univ.), Mitsuru Funato(Kyoto Univ.), Takeyoshi Onuma(Kogakuin Univ.)

3:00 PM - 3:15 PM

[20p-H121-8] Development of low concentration doping technique for nitride semiconductors

〇Yasuaki Arakawa1, Kohei Ueno1, Jitsuo Ohta1,2, Hiroshi Fujioka1,3 (1.IIS, The Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:GaN,Sputtering