[20p-H135-1~16] 3.9 Terahertz technologies

[20p-H135-11] Dependence of Crystal Growth Conditions on InGaAs Photoconductive Layers with 1.5 μm Excitation

〇Yoshihiko Kamo¹, Takahiro Ida¹, Masayuki Kurita¹ (1.Pioneer Corp.)

Keywords:photoconductive antenna,terahertz

We have examined high-performance photoconductive antennas (PCAs) excited by 1.5 μm laser pulses to realize inexpensive THz systems. We previously reported that the optimum physical properties of photoconductive layers excited by 800 nm differed between the THz emitter and detector. In this study, to verify whether the optimization guideline of the physical properties could apply to the InGaAs photoconductive layers excited by 1.5 μm, the correlation between physical properties and growth conditions of the molecular beam epitaxy was evaluated, and two types of photoconductive layers for the THz emitter and detector were produced.