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[20p-P13-13] Hall factor for nearest-neighbor hopping conduction in p-type InP and GaN
Keywords:nearest-neibor hopping conduction,impurity-band conduction,Hall factor
The experimental data of the Hall-effect measurements on p-type InP and GaN have been analyzed with assuming that the Hall factor for nearest-neibor hopping conduction depends on temperature as Aib=(kBT/J)exp(T0H/T). As a result, in spite of hopping conduction of holes in an impurity band of an acceptor level, the experimental data of the Hall-effect measurements on Mg-doped InP and GaN have been well reproduced by the fits with negative values of the Hall factor for the impurity-band conduction.