The 63rd JSAP Spring Meeting, 2016

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Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P13 (Gymnasium)

4:00 PM - 6:00 PM

[20p-P13-3] Electrical and optical properties of Mg2Si pn diodes fabricated by short-period annealing

〇Yuma Onizawa1, Nobuhiko Hori1, Akiyama Tomohiro1, Esaka Humitaka2, Udono Haruhiko1 (1.Ibaraki Univ., 2.JAEA)

Keywords:silicide