The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P13 (Gymnasium)

4:00 PM - 6:00 PM

[20p-P13-8] Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films

Hiroaki Tsukamoto1, Motoki Iinuma2, Haruki Yamaguchi1, Naoki Murakoso2, Kazuki Yamasaki2, Yoshikazu Terai1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech.)

Keywords:silicide