The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-P13-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P13 (Gymnasium)

4:00 PM - 6:00 PM

[20p-P13-9] Investigation of impurity concentrations in β-FeSi2 films grown by sputtering method

〇Tetsu Hattori1, Takahiko Higashi1, Shuya Ikeda2, Kazuya Ogi2, Yoshikazu Terai1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech.)

Keywords:Silicide