The 63rd JSAP Spring Meeting, 2016

Presentation information

Print

Poster presentation

13 Semiconductors » 13.10 Compound solar cells

[20p-P14-1~23] 13.10 Compound solar cells

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P14 (Gymnasium)

4:00 PM - 6:00 PM

[20p-P14-1] Influence of well width in InGaN/GaN MQW solar cell structure on photovoltaic characteristics

〇Noriyuki Watanabe1, Manabu Mitsuhara1, Naoteru Shigekawa2 (1.NTT, 2.Osaka City Univ.)

Keywords:Nitride semiconductor,Solar cell,InGaN/GaN MQW