[20p-P14-1~23] 13.10 Compound solar cells

△ [20p-P14-3] The effect of flax of low energy electron-beam on GaAs solar cells

〇(DC)Yasuki Okuno¹, Shuichi Okuda¹, Takashi Oka¹, Shirou Kawakita^1,2, Mitsuru Imaizumi², Hiroaki Kusawake² (1.Osaka Pref. Univ., 2.JAXA)

Keywords:non-ionizing energy loss,electron-beam,GaAs solar cell

The displacement threshold energy of atoms in a semiconductor is calculated by Non-ionizing energy loss (NIEL). In previous study, InGaP solar cells were revealed to be degraded by 70 keV electron-beams which are expected to not recoil the atoms in InGaP semiconductor. The displacement threshold energy of GaAs semiconductor is considered about 250 keV by NIEL. In this study, the degradation of GaAs by irradiation with 70 keV electron-beams is observed. In addition, the effect of irradiation flux on GaAs solar cells was also revealed.