4:00 PM - 6:00 PM
△ [20p-P14-3] The effect of flax of low energy electron-beam on GaAs solar cells
Keywords:non-ionizing energy loss,electron-beam,GaAs solar cell
The displacement threshold energy of atoms in a semiconductor is calculated by Non-ionizing energy loss (NIEL). In previous study, InGaP solar cells were revealed to be degraded by 70 keV electron-beams which are expected to not recoil the atoms in InGaP semiconductor. The displacement threshold energy of GaAs semiconductor is considered about 250 keV by NIEL. In this study, the degradation of GaAs by irradiation with 70 keV electron-beams is observed. In addition, the effect of irradiation flux on GaAs solar cells was also revealed.