13:30 〜 15:30
▲ [20p-P7-5] Improvement of Silicon Nanowire Solar Cells made by Metal Catalyzed Electroless and Nano-imprint lithography
キーワード：silicon nanowire,solar cell
As a clean and renewable energy, solar energy has been burgeoning advanced in the past several decades which the high cost bulk silicon (Si) solar mastered the major market due to its high efficiency. However in recent years, with enormous advantages of carrier collection and light absorption, Si nanowire (SiNW) solar cells offer a potential to replace the bulk Silicon solar cells.
SiNW arrays were prepared by Metal Catalyzed Electroless Etching (MCEE) and Nano-imprint lithography (NIL) on 525 µm-thick n-type crystalline Si (111) substrates. Then, all samples were put into CVD chamber to fabricate solar cell junction by deposition of the B doped p-type Si shell layer. Finally, a finger grid pattern Al and full coverage Ag were sputtered for front electrode and back contact.
A "back surface field" (BSF) consists of a higher doped region at the rear surface of the solar cell. The interface between the high and low doped regions introduces a barrier to minority carrier flow to the rear surface which reduce back surface recombination. Rapid thermal annealing (RTA) aim at activate dopant to obtain the desired electronic contribution from impurity species in a semiconductor.
With the BSF treatment, the fill factor increase from 0.39 to 0.62 cause the efficiency growth (4.12% to 6.59%). These results obviously indicate the extremely effect of BSF which reduce the back surface recombination. For another, after RTA, both the Jsc and Voc have a huge growth (1.56 mA/cm2 in Jsc and 0.03V in Voc ) show the dopant activation effect of electronic contribution.
BSF and RTA also dramatically increase the performance of solar cells by NIL, which means these technologies are available for this type nanowires solar cells.
SiNW arrays were prepared by Metal Catalyzed Electroless Etching (MCEE) and Nano-imprint lithography (NIL) on 525 µm-thick n-type crystalline Si (111) substrates. Then, all samples were put into CVD chamber to fabricate solar cell junction by deposition of the B doped p-type Si shell layer. Finally, a finger grid pattern Al and full coverage Ag were sputtered for front electrode and back contact.
A "back surface field" (BSF) consists of a higher doped region at the rear surface of the solar cell. The interface between the high and low doped regions introduces a barrier to minority carrier flow to the rear surface which reduce back surface recombination. Rapid thermal annealing (RTA) aim at activate dopant to obtain the desired electronic contribution from impurity species in a semiconductor.
With the BSF treatment, the fill factor increase from 0.39 to 0.62 cause the efficiency growth (4.12% to 6.59%). These results obviously indicate the extremely effect of BSF which reduce the back surface recombination. For another, after RTA, both the Jsc and Voc have a huge growth (1.56 mA/cm2 in Jsc and 0.03V in Voc ) show the dopant activation effect of electronic contribution.
BSF and RTA also dramatically increase the performance of solar cells by NIL, which means these technologies are available for this type nanowires solar cells.