The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20p-S221-1~17] 13.3 Insulator technology

Sun. Mar 20, 2016 1:45 PM - 6:15 PM S221 (S2)

Takanobu Watanabe(Waseda Univ.), Hiroshi Funakubo(Titech)

1:45 PM - 2:00 PM

[20p-S221-1] Investigation of MoS2 MOS interfacial properties by the conductance method

〇Yuhei Ozawa1,2, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (1.Univ. Tokyo, 2.JST-CREST)

Keywords:molybdenum disulphide,interfacial properties,conductance method