[20p-S221-1~17] 13.3 Insulator technology

[20p-S221-13] Consideration for the process dependence of electrical characteristics by the structural analysis of the ferroelectric HfSiO film using FT-IR method

〇Yuichi Kamimuta¹, Shosuke Fujii¹, Takaishi Riichiro¹, Ino Tsunehiro¹, Nakasaki Yasushi¹, Saitoh Masumi¹, Koyama Masato¹ (1.Toshiba Corp.)

Keywords:ferroelectrics,HfO2