Poster presentation

[19p-P3-1~7] 13.3 Insulator technology

Sat. Mar 19, 2016 1:30 PM - 3:30 PM P3 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:30 PM - 3:30 PM

[19p-P3-1] Study of thermal diffusion of germanium and oxygen atoms in HfO₂/GeO₂/Ge stacks

〇Shingo Ogawa^1,2, Ryohei Asahara², Yuya Minoura², Hideki Sako¹, Naohiko Kawasaki¹, Ichiko Yamada¹, Takashi Miyamoto¹, Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (1.TRC, 2.Osaka Univ.)

1:30 PM - 3:30 PM

[19p-P3-2] Evaluation of Traps in Ge-MIS Structures Fabricated by Radical-enhanced ALD (2);annealing effects

〇Hidehumi Narita¹, Daichi Yamada², Yukio Fukuda², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tokyo Univ. of Science, Suwa)

1:30 PM - 3:30 PM

▲ [19p-P3-3] Characterization of sol-gel derived Nb doped ZrO₂ thin film

〇Joonam Kim¹, Eisuke Tokumitu¹ (1.JAIST)

1:30 PM - 3:30 PM

[19p-P3-4] Development of Deposition Technology of Gate SiO₂ Layer for GaN Power Transistors

Shota Takagi¹, Tetsuji Arai¹, Keisuke Arimoto¹, Junji Yamanaka¹, 〇Kiyokazu Nakagawa¹, Toshiyuki Takamatsu², Katsunori Ueno³ (1.Univ. Yamanashi, 2.SST, 3.Fuji Ele.)

1:30 PM - 3:30 PM

[19p-P3-5] Mixed film of Al₂O₃ and SiO₂ for a gate insulator of GaN MOS devices

〇Daigo Kikuta¹, Kenji Itoh¹, Tetsuo Narita¹, Tomohiko Mori¹ (1.Toyota CRDL)

1:30 PM - 3:30 PM

[19p-P3-6] Surface oxidation of silicon nitride films under high temperature and humid environment

〇Tomoki Oku¹, Toshihiko Shiga¹, Masahiro Totsuka¹, Hitoshi Watanabe¹ (1.Mitsubishi Electric)

1:30 PM - 3:30 PM

▲ [19p-P3-7] Research on passivation of semicounductor surfaces by heat treatment in liquid water

〇takayuki motoki¹, tomohiko nakamura¹, masahiko hasumi¹, toshiyuki sameshima¹, tomohisa mizuno² (1.TUAT, 2.Kanagawa Univ.)

Oral presentation

[20a-S221-1~12] 13.3 Insulator technology

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Takeshi Ishida(HITACHI), Masato Koyama(TOSHIBA)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[20a-S221-1] Extension of Silicon Emission Mechanism for Silicon Pillar Oxidation

〇Hiroyuki Kageshima^1,4, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

9:15 AM - 9:30 AM

[20a-S221-2] First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO₂ interface in V-MOSFET

〇(M1)Shingo Kawachi¹, Hiroki Shirakawa¹, Masaaki Araidai^2,1,5, Hiroyuki Kageshima^3,5, Tetsuo Endoh^4,5, Kenji Shiraishi^2,1,5 (1.Nagoya Univ., 2.IMaSS, 3.Shimane Univ., 4.Tohoku Univ., 5.JST-ACCEL)

9:30 AM - 9:45 AM

△ [20a-S221-3] Evaluation of Si/SiO₂ interface structure obtained by charge-transfer type molecular dynamics

〇(D)So Takamoto¹, Takahiro Yamasaki^2,3, Takahisa Ohno^2,3,4, Chioko Kaneta^3,5, Satoshi Izumi¹, Shinsuke Sakai¹ (1.Univ. of Tokyo, 2.NIMS, 3.MARCEED, 4.IIIS, Univ. of Tokyo, 5.Fujitsu Lab.)

9:45 AM - 10:00 AM

[20a-S221-4] Evaluation of Si MOS interface using Laser Terahertz Emission Microscope (LTEM)

〇Toshimitsu Mochizuki¹, Akira Ito², Hidetoshi Nakanishi², Katsuhito Tanahashi¹, Iwao Kawayama³, Masayoshi Tonouchi³, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST, 2.SCREEN Hldgs., 3.ILE, Osaka Univ.)

10:00 AM - 10:15 AM

▲ [20a-S221-5] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics (II)

〇(D)SheikhRashel Al Ahmed¹, Fumiya Uehara², Kyoteru Kobayashi^1,2 (1.GRAD SCH S&T, Tokai Univ, 2.GRAD SCH Eng, Tokai Univ)

10:15 AM - 10:30 AM

[20a-S221-6] Effects of Gate Insulators on Threshold Voltage of Amorphous Silicon TFTs

〇Masahiko Ando¹, Masatoshi Wakagi¹, Ken-ichi Onisawa² (1.Hitachi R&D, 2.Koga-Soken)

10:45 AM - 11:00 AM

▲ [20a-S221-7] Thermodynamic Control of GeO₂ Suppression in SiGe Oxidation by p_O2 and Temperature Manipulation

〇(D)Woojin Song¹, Akira Toriumi¹ (1.Univ. Tokyo)

11:00 AM - 11:15 AM

[20a-S221-8] Optimization of growth conditions of rutile type TiO₂ on Ge by PLD

〇(M1)Yoshihisa Suzuki^1,2, Takahiro Nagata², Yoshiyuki Yamashita², Toshihide Nabatame², Atsushi Ogura¹, Toyohiro Chikyow² (1.Meiji Univ., 2.NIMS)

11:15 AM - 11:30 AM

[20a-S221-9] Improvement of C-V Characteristics in La_2xA_2(1-x)O₃(A=Lu, Y)/La₂O₃/Ge(111) MIS Structures

〇Takeshi Kanashima¹, Masato Zenitaka¹, Keisuke Yamamoto², Riku Yamashiro¹, Jumpei Tadano³, Hiroshi Nohira³, Hiroshi Nakashima², Shinya Yamada¹, Kohei Hamaya¹ (1.Osaka Univ., 2.Kyushu Univ., 3.Tokyo City Univ.)

11:30 AM - 11:45 AM

[20a-S221-10] Hole mobility enhancement in Ge p-MOSFET due to introduction of Al into gate stack

〇Yuta Nagatomi¹, Shintaro Tanaka¹, Tomoki Tateyama¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (1.I-EggS, Kyushu Univ., 2.KASTEC, Kyushu Univ.)

11:45 AM - 12:00 PM

[20a-S221-11] GeO detachment restraint by Al₂O₃cap layer and Electric characteristic evaluation

〇Hiroyoshi Otake¹ (1.Tokyo Univ. of Agri. & Tech.)

12:00 PM - 12:15 PM

▼ [20a-S221-12] Influence of Al₂O₃/GeO_x/Ge MOS interface structures on the slow trap density

〇(D)Mengnan Ke^1,2, Xiao Yu^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Tokyo Univ., 2.JST-CREST)

Oral presentation

[20p-S221-1~17] 13.3 Insulator technology

Sun. Mar 20, 2016 1:45 PM - 6:15 PM S221 (S2)

Takanobu Watanabe(Waseda Univ.), Hiroshi Funakubo(Titech)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:45 PM - 2:00 PM

[20p-S221-1] Investigation of MoS₂ MOS interfacial properties by the conductance method

〇Yuhei Ozawa^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Univ. Tokyo, 2.JST-CREST)

2:00 PM - 2:15 PM

▲ [20p-S221-2] Improvement of MOS Interfaces of La₂O₃/InGaAs by Ultra-thin ALD Al₂O₃ Capping Layers

〇(D)ChihYu Chang^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

2:15 PM - 2:30 PM

[20p-S221-3] Hydrogen Distribution Analysis in Al₂O₃ Film -Dependence of Annealing Temperature-

〇Yasuo Shimizu¹, Bin Han¹, Yuan Tu¹, Koji Inoue¹, Fumiko Yano², Masao Inoue³, Yorinobu Kunimune⁴, Yasuhiro Shimada⁴, Toshiharu Katayama⁴, Takashi Ide⁴, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Tokyo Inst. Tech., 3.Renesas, 4.RSMC)

2:30 PM - 2:45 PM

[20p-S221-4] Electric characteristics of Al₂O₃ films formed at different ALD temperatures

〇Atsushi Hiraiwa¹, Daisuke Matsumura², Hiroshi Kawarada^1,2 (1.Waseda Univ., RONL, 2.Waseda Univ., FSE)

2:45 PM - 3:00 PM

△ [20p-S221-5] Fabrication of Al₂O₃ Dielectric Film Grown by Atomic Layer Deposition with DMAH

〇Koji Yoshitsugu¹, Ishikawa Yasuaki¹, Kiyoshi Takahashi², Uraoka Yukiharu¹ (1.NAIST, 2.Nippon Aluminum Alkyls, Ltd.)

3:00 PM - 3:15 PM

▲ [20p-S221-6] Anomalous Flatband Voltage Shift of AlF_xO_y/Al₂O₃ MOS Capacitors: Dipole Layer Formation at Dielectric Interfaces with Different Anions

〇(D)Jiayang Fei¹, Koji Kita¹ (1.The Univ. of Tokyo)

3:15 PM - 3:30 PM

△ [20p-S221-7] Large flatband voltage shift (>1 V) induced by the multiple dipole layers in Al₂O₃/SiO₂ repeated stacks

〇Hironobu Kamata¹, Koji Kita¹ (1.The Univ. of Tokyo)

3:30 PM - 3:45 PM

△ [20p-S221-8] Improvement of leakage current properties for DRAM capacitors with ZrO₂/Al₂O₃/ZrO₂ stack structure

〇(B)Takashi Onaya^1,2, Toshihide Nabatame², Tomomi Sawada², Kazunori Kurishima^1,2, Akihiko Ohi², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA)

3:45 PM - 4:00 PM

[20p-S221-9] Consideration of Fabrication Method in ZrO2/Si Interface Layer

〇Yusuke Sugino¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ of A & T)

4:00 PM - 4:15 PM

[20p-S221-10] Improvement of moisture resistance of La₂O₃ films by impurity doping

〇Yutaka Adachi¹, Isao Sakaguchi¹ (1.NIMS)

4:30 PM - 4:45 PM

[20p-S221-11] The effect of Ion drift in SrTiO₃ by Liquid-Phase Deposition method

〇(M1C)Shunsaku Kunimitsu¹, Motoki Inano¹, Nobuo Haneji¹ (1.YNU)

4:45 PM - 5:00 PM

△ [20p-S221-12] Analysis of temperature-dependent structure change of ferroelectric Hf(Y)O thin films by synchrotron radiation X-ray diffraction

〇Riichiro Takaishi¹, Tsunehiro Ino¹, Shosuke Fujii¹ (1.Toshiba Corp.)

5:00 PM - 5:15 PM

[20p-S221-13] Consideration for the process dependence of electrical characteristics by the structural analysis of the ferroelectric HfSiO film using FT-IR method

〇Yuichi Kamimuta¹, Shosuke Fujii¹, Takaishi Riichiro¹, Ino Tsunehiro¹, Nakasaki Yasushi¹, Saitoh Masumi¹, Koyama Masato¹ (1.Toshiba Corp.)

5:15 PM - 5:30 PM

▼ [20p-S221-14] New finding of ferroelectricity of N doped HfO₂ films

〇(D)Lun Xu¹, Tomonori Nishimular¹, Shigehisa Shibayama¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.Univ. Tokyo, 2.AIST)

5:30 PM - 5:45 PM

[20p-S221-15] Structural analysis of ferroelectric Y-doped HfO₂ by Raman and XRD methods

〇Kazutaka Izukashi¹, Shigehisa Shibayama^1,2, Takeaki Yajima¹, Tomonori Nishimura¹, Shinji Migita³, Akira Toriumi¹ (1.The Univ. of Tokyo, 2.JSPS research fellow PD, 3.AIST)

5:45 PM - 6:00 PM

[20p-S221-16] Evolution of uniform ferroelectric phase in polymorph HfO₂ film

〇Shigehisa Shibayama^1,2, Lun Xu¹, Shinji Migita³, Akira Toriumi¹ (1.The Univ. of Tokyo, 2.JSPS research fellow, 3.AIST)

6:00 PM - 6:15 PM

[20p-S221-17] Decay of polarization domain in ferroelectric HfO₂ film

〇Shigehisa Shibayama^1,2, Lun Xu¹, Shinji Migita³, Akira Toriumi¹ (1.The Univ. of Tokyo, 2.JSPS research fellow, 3.AIST)

Sessions

13 Semiconductors » 13.3 Insulator technology

[19p-P3-1~7] 13.3 Insulator technology

▲ [19p-P3-3] Characterization of sol-gel derived Nb doped ZrO2 thin film

▲ [19p-P3-7] Research on passivation of semicounductor surfaces by heat treatment in liquid water

[20a-S221-1~12] 13.3 Insulator technology

△ [20a-S221-3] Evaluation of Si/SiO2 interface structure obtained by charge-transfer type molecular dynamics

▲ [20a-S221-5] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics (II)

▲ [20a-S221-7] Thermodynamic Control of GeO2 Suppression in SiGe Oxidation by pO2 and Temperature Manipulation

▼ [20a-S221-12] Influence of Al2O3/GeOx/Ge MOS interface structures on the slow trap density

[20p-S221-1~17] 13.3 Insulator technology

▲ [20p-S221-2] Improvement of MOS Interfaces of La2O3/InGaAs by Ultra-thin ALD Al2O3 Capping Layers

△ [20p-S221-5] Fabrication of Al2O3 Dielectric Film Grown by Atomic Layer Deposition with DMAH

▲ [20p-S221-6] Anomalous Flatband Voltage Shift of AlFxOy/Al2O3 MOS Capacitors: Dipole Layer Formation at Dielectric Interfaces with Different Anions

△ [20p-S221-7] Large flatband voltage shift (>1 V) induced by the multiple dipole layers in Al2O3/SiO2 repeated stacks

△ [20p-S221-8] Improvement of leakage current properties for DRAM capacitors with ZrO2/Al2O3/ZrO2 stack structure

△ [20p-S221-12] Analysis of temperature-dependent structure change of ferroelectric Hf(Y)O thin films by synchrotron radiation X-ray diffraction

▼ [20p-S221-14] New finding of ferroelectricity of N doped HfO2 films

Authentication

▲ [19p-P3-3] Characterization of sol-gel derived Nb doped ZrO₂ thin film

△ [20a-S221-3] Evaluation of Si/SiO₂ interface structure obtained by charge-transfer type molecular dynamics

▲ [20a-S221-7] Thermodynamic Control of GeO₂ Suppression in SiGe Oxidation by p_O2 and Temperature Manipulation

▼ [20a-S221-12] Influence of Al₂O₃/GeO_x/Ge MOS interface structures on the slow trap density

▲ [20p-S221-2] Improvement of MOS Interfaces of La₂O₃/InGaAs by Ultra-thin ALD Al₂O₃ Capping Layers

△ [20p-S221-5] Fabrication of Al₂O₃ Dielectric Film Grown by Atomic Layer Deposition with DMAH

▲ [20p-S221-6] Anomalous Flatband Voltage Shift of AlF_xO_y/Al₂O₃ MOS Capacitors: Dipole Layer Formation at Dielectric Interfaces with Different Anions

△ [20p-S221-7] Large flatband voltage shift (>1 V) induced by the multiple dipole layers in Al₂O₃/SiO₂ repeated stacks

△ [20p-S221-8] Improvement of leakage current properties for DRAM capacitors with ZrO₂/Al₂O₃/ZrO₂ stack structure

▼ [20p-S221-14] New finding of ferroelectricity of N doped HfO₂ films