Takashi Onaya

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:45 PM - 6:15 PM S221 (S2)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[20p-S221-1~17] 13.3 Insulator technology

3:30 PM - 3:45 PM

△ [20p-S221-8] Improvement of leakage current properties for DRAM capacitors with ZrO₂/Al₂O₃/ZrO₂ stack structure

〇(B)Takashi Onaya^1,2, Toshihide Nabatame², Tomomi Sawada², Kazunori Kurishima^1,2, Akihiko Ohi², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA)