[19p-P3-1~7] 13.3 Insulator technology

[19p-P3-5] Mixed film of Al₂O₃ and SiO₂ for a gate insulator of GaN MOS devices

〇Daigo Kikuta¹, Kenji Itoh¹, Tetsuo Narita¹, Tomohiko Mori¹ (1.Toyota CRDL)

Keywords:gate insulator,MOS,GaN