ChihYu Chang

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:45 PM - 6:15 PM S221 (S2)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[20p-S221-1~17] 13.3 Insulator technology

2:00 PM - 2:15 PM

▲ [20p-S221-2] Improvement of MOS Interfaces of La₂O₃/InGaAs by Ultra-thin ALD Al₂O₃ Capping Layers

〇(D)ChihYu Chang^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)