The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20a-S221-1~12] 13.3 Insulator technology

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Takeshi Ishida(HITACHI), Masato Koyama(TOSHIBA)

12:00 PM - 12:15 PM

▼ [20a-S221-12] Influence of Al2O3/GeOx/Ge MOS interface structures on the slow trap density

〇(D)Mengnan Ke1,2, Xiao Yu1,2, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (1.Tokyo Univ., 2.JST-CREST)

Keywords:semiconductor