The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20a-S221-1~12] 13.3 Insulator technology

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Takeshi Ishida(HITACHI), Masato Koyama(TOSHIBA)

11:45 AM - 12:00 PM

[20a-S221-11] GeO detachment restraint by Al2O3 cap layer and Electric characteristic evaluation

〇Hiroyoshi Otake1 (1.Tokyo Univ. of Agri. & Tech.)

Keywords:Germanium,GeO2,Al2O3