First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO<sub>2</sub> interface in V-MOSFET

Shingo Kawachi; Hiroki Shirakawa; Masaaki Araidai; Hiroyuki Kageshima; Tetsuo Endoh; Kenji Shiraishi

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20a-S221-1~12] 13.3 Insulator technology

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Takeshi Ishida(HITACHI), Masato Koyama(TOSHIBA)

9:15 AM - 9:30 AM

[20a-S221-2] First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO₂ interface in V-MOSFET

〇(M1)Shingo Kawachi¹, Hiroki Shirakawa¹, Masaaki Araidai^2,1,5, Hiroyuki Kageshima^3,5, Tetsuo Endoh^4,5, Kenji Shiraishi^2,1,5 (1.Nagoya Univ., 2.IMaSS, 3.Shimane Univ., 4.Tohoku Univ., 5.JST-ACCEL)

Keywords:semiconductor,silicon,V-MOSFET

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Presentation information

[20a-S221-1~12] 13.3 Insulator technology

[20a-S221-2] First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO2 interface in V-MOSFET

[20a-S221-2] First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO₂ interface in V-MOSFET