[20a-S221-1~12] 13.3 Insulator technology

[20a-S221-1] Extension of Silicon Emission Mechanism for Silicon Pillar Oxidation

〇Hiroyuki Kageshima^1,4, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

Keywords:Si oxidation,nanowire,theory

Oxidation of Si pillar has been studied by many researchers, and 'unaccountable Si' or 'missing Si' is reported. When a Si pillar is thermally oxidized, the total Si mass after oxidation is about 50% of that before the oxidation. We approach this issue by extending the Si emission mechanism, which can successfully explain the detail physics in the oxidation process of planar Si.