[19p-P3-1~7] 13.3 Insulator technology

[19p-P3-1] Study of thermal diffusion of germanium and oxygen atoms in HfO₂/GeO₂/Ge stacks

〇Shingo Ogawa^1,2, Ryohei Asahara², Yuya Minoura², Hideki Sako¹, Naohiko Kawasaki¹, Ichiko Yamada¹, Takashi Miyamoto¹, Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (1.TRC, 2.Osaka Univ.)

Keywords:Ge,HfO2,atom diffusion

We have systematically investigated the HfO₂/GeO₂ interfacial reaction and the thermal diffusion of germanium and oxygen atoms in HfO₂/GeO₂/Ge stacks by XPS and SIMS with an isotopic labeling technique. The interfacial reaction was caused at relatively low temperature of around 200°C and the amount of diffused atoms increased with the annealing temperature. The thermal diffusion of Ge and oxygen is found to be independent each other in the HfO₂ films.