[19p-P3-1~7] 13.3 Insulator technology

[19p-P3-2] Evaluation of Traps in Ge-MIS Structures Fabricated by Radical-enhanced ALD (2);annealing effects

〇Hidehumi Narita¹, Daichi Yamada², Yukio Fukuda², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tokyo Univ. of Science, Suwa)

Keywords:Ge-MIS,Interface state