[20a-S221-1~12] 13.3 Insulator technology

[20a-S221-4] Evaluation of Si MOS interface using Laser Terahertz Emission Microscope (LTEM)

〇Toshimitsu Mochizuki¹, Akira Ito², Hidetoshi Nakanishi², Katsuhito Tanahashi¹, Iwao Kawayama³, Masayoshi Tonouchi³, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST, 2.SCREEN Hldgs., 3.ILE, Osaka Univ.)

Keywords:Terahertz,Metal-Oxide-Semiconductor structure,Surface Potential

We measured THz waveform from the Si-MOS structure samples with transparent ITO electrodes under irradiation of a pulse laser. We also evaluated the surface potential with capacitance-voltage (C-V) characteristics of the sample. With the simplest approximation, we expect the THz amplitude to be proportional to the surface potential. The observed peak amplitude of the THz emission strongly correlated with the surface potential and steeply changed near the flatband voltage including their signs.