The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20p-S221-1~17] 13.3 Insulator technology

Sun. Mar 20, 2016 1:45 PM - 6:15 PM S221 (S2)

Takanobu Watanabe(Waseda Univ.), Hiroshi Funakubo(Titech)

4:30 PM - 4:45 PM

[20p-S221-11] The effect of Ion drift in SrTiO3 by Liquid-Phase Deposition method

〇(M1C)Shunsaku Kunimitsu1, Motoki Inano1, Nobuo Haneji1 (1.YNU)

Keywords:Liquid Phase Deposition,dielectric thin film,ion drift

By the growth in recent years of the information society, lighter weight, higher speed has been required in electronic devices. In this laboratory, we have done research on applications of MIM (Metal Insulator Metal) capacitor and FeRAM using ferroelectric materials such as (Ba, Sr) TiO3 (BST) and Bi4Ti3O12 (BIT) by liquid phase deposition method. In this study, we found the effect of the ion drift in SrTiO3 which is the basic constituent of BST deposited by LPD method, it is to report this.