The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20p-S221-1~17] 13.3 Insulator technology

Sun. Mar 20, 2016 1:45 PM - 6:15 PM S221 (S2)

Takanobu Watanabe(Waseda Univ.), Hiroshi Funakubo(Titech)

5:30 PM - 5:45 PM

[20p-S221-15] Structural analysis of ferroelectric Y-doped HfO2 by Raman and XRD methods

〇Kazutaka Izukashi1, Shigehisa Shibayama1,2, Takeaki Yajima1, Tomonori Nishimura1, Shinji Migita3, Akira Toriumi1 (1.The Univ. of Tokyo, 2.JSPS research fellow PD, 3.AIST)

Keywords:ferroelectric,Raman