[20a-S221-1~12] 13.3 Insulator technology

[20a-S221-6] Effects of Gate Insulators on Threshold Voltage of Amorphous Silicon TFTs

〇Masahiko Ando¹, Masatoshi Wakagi¹, Ken-ichi Onisawa² (1.Hitachi R&D, 2.Koga-Soken)

Keywords:amorphous silicon,TFT,gate insulator

There are few reports on the reason for SiNx as a typical gate insulator material of amorphous silicon (a-Si) TFTs in contrast to thermal SiOx for crystalline silicon (c-Si) FETs. We would like to clarify the dependence of the threshold voltage and threshold voltage shift under gate DC bias stress application of a-Si TFTs by appling four kinds of gate stucks composed of SiOx and SiNx as the bulk and interface.