The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20p-S221-1~17] 13.3 Insulator technology

Sun. Mar 20, 2016 1:45 PM - 6:15 PM S221 (S2)

Takanobu Watanabe(Waseda Univ.), Hiroshi Funakubo(Titech)

2:00 PM - 2:15 PM

▲ [20p-S221-2] Improvement of MOS Interfaces of La2O3/InGaAs by Ultra-thin ALD Al2O3 Capping Layers

〇(D)ChihYu Chang1,2, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

Keywords:InGaAs,La2O3,Traps