[20p-S221-1~17] 13.3 Insulator technology

△ [20p-S221-5] Fabrication of Al₂O₃ Dielectric Film Grown by Atomic Layer Deposition with DMAH

〇Koji Yoshitsugu¹, Ishikawa Yasuaki¹, Kiyoshi Takahashi², Uraoka Yukiharu¹ (1.NAIST, 2.Nippon Aluminum Alkyls, Ltd.)

Keywords:atomic layer deposition,Al2O3,C-V

Atomic-layer-deposited (ALD) Al₂O₃ has been expected for a gate dielectric of GaN-based MIS device. Although TMA is commonly employed as an aluminum precursor in ALD, residual carbon in the product is concerned since TMA combines with 3 methyl groups. In addition, adsorption of monomolecular in the ALD process is difficult for a large steric hindrance. In this study, we investigated fabrication and characterization of Al₂O₃ film by ALD using DMAH which one of the methyl groups of TMA is bonded to hydrogen.