The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.9 Optical properties and light-emitting devices

[20p-S223-9~17] 13.9 Optical properties and light-emitting devices

Sun. Mar 20, 2016 4:15 PM - 6:30 PM S223 (S2)

Kenji Imakita(Kobe Univ.)

4:30 PM - 4:45 PM

▲ [20p-S223-10] Relationship between electrical and luminescence properties of GaN/Eu-doped GaN multiple-nanolayer structures investigated with impedance spectroscopy

〇Wanxin ZHU1, Masashi Ishii2, Atsushi Koizumi1, Yasufumi Fujiwara1 (1.Osaka Univ., 2.NIMS)

Keywords:Eu,GaN,impedance spectroscopy