[20p-S223-1~8] 13.7 Nano structures and quantum phenomena

△ [20p-S223-7] Temperature dependence of spin relaxation in GaAs/AlGaAs/AlAs type-II tunneling bi-quantum-well

〇Ko Nakayama¹, Takanori Aritake¹, Hao Wu¹, Canyu Jiang¹, Yoshiki Nakamura¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ, 2.Hokkaido Univ)

Keywords:spin relaxation,tunneling bi-quantum-well,type-II superlattice

In GaAs/AlGaAs/AlAs type-II tunneling bi-quantum-well, the recovery time of excitonic absorption bleaching is reduced because the excited electron in GaAs well can tunnel to the X point in AlAs layer. In this study, we observed slow and fast spin relaxation can be attributed to electron and hole spin relaxation, respectively. The temperature dependence of spin relaxation time indicates the contribution of the D’yakonov-Perel’ process and Elliott-Yafet process.