The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.7 Nano structures and quantum phenomena

[20p-S223-1~8] 13.7 Nano structures and quantum phenomena

Sun. Mar 20, 2016 1:45 PM - 3:45 PM S223 (S2)

Toshiyuki Miyazawa(Univ. of Tokyo)

3:30 PM - 3:45 PM

[20p-S223-8] Observation of spin relaxation in In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44 coupled double quantum wells

tomoki ishikawa1, Shinichiro Gozu2, Teruo Mozume2, Masaki Asakawa1, Shunsuke Ohki1, Atsushi Tackeuchi1 (1.Waseda Univ., 2.AIST)

Keywords:spin relaxation,coupled double quantum wells

In this study, we have investigated the spin relaxation mechanism in InGaAs/AlGaAs/AlAsSb coupled double quantum wells(CDQWs) by time-resolved spin-dependent pump and probe measurements. As a result, this sample had newly slow component of spin relaxation which was not observed in InGaAs/AlAs/AlAsSb CDQWs due to different coupling barrier layer between InGaAs wells.