The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[20p-S321-1~16] 3.13 Semiconductor optical devices

Sun. Mar 20, 2016 1:45 PM - 6:00 PM S321 (S3)

Tomoyuki Miyamoto(Titech), Takahiro Kitada(Tokushima Univ)

4:15 PM - 4:30 PM

[20p-S321-10] Light output characteristics of membrane distributed Bragg reflector laser with surface grating

〇(DC)Takuo Hiratani1, Daisuke Inoue1, Takahiro Tomiyasu1, Kai Fukuda1, Tatsuya Uryu1, Tomohiro Amemiya2, Nobuhiko Nishiyama1, Shigehisa Arai1,2 (1.Tokyo Tech., 2.QNERC)

Keywords:semiconductor laser,membrane laser,DBR

In the global interconnects of LSI, some problems such as signal delay and Joule heating have been occurred. To solve these problems, introduction of optical interconnection to the LSI was prposed and widely studied. We have realized membrane lasers for on-chip light sources. In this work, the membrane DBR laser was fabricated for high light output. The threshold current of 1.7 mA and external differential quantum efficiency of 31% for front facet and 2.3% for rear facet were obrained. The light output ratio between the front and rear facet were 13. As a result, the DBR reflectivity of 88% were estimated.