[20p-S421-1~12] 17.3 Layered materials

△ [20p-S421-3] Bandgap modulation at MoS₂/WS₂-based semiconductor heterojunction interfaces

〇(M2)Yu Kobayashi¹, Shoji Yoshida², Ryuji Sakurada², Testuki Saito¹, Kenji Watanabe³, Takashi Taniguchi³, Yutaka Maniwa¹, Hidemi Shigekawa², Yasumitsu Miyata^1,4 (1.Tokyo Metropolitan Univ., 2.Tsukuba Univ., 3.NIMS, 4.JST PRESTO)

Keywords:transition metal dichalcogenides,heterojunction,bandgap modulation