[20p-S421-1~12] 17.3 Layered materials

△ [20p-S421-6] Fabrication of high performance optoelectrical device with mild oxygen plasma treated few-layer WSe₂

〇Reito Nagai¹, Kato Toshiaki¹, Kaneko Toshiro¹ (1.Dept. of Electronic Eng., Tohoku Univ.)

Keywords:optoelectrical device,2D material,plasma

Transition meal dichalcogenide (TMD) attracts intense attention as a brand new semiconducting material for the application for flexible optoelectrical devices. Systematic investigations were carried out on purpose to control optoelectrical property of tungsten diselenide (WSe₂) by plasma functionalization. Based on these studies, we have succeeded in improving contact between WSe₂ and electrode, resulting in improving optoelectrical property of WSe₂ using mild plasma treatment which is an original damage-less plasma functionalizing method.