[20p-S421-1~12] 17.3 Layered materials

△ [20p-S421-7] Evaluation of CVD-MoS₂/SiO₂ Interaction and Dual-Gate Modulation by Fully Covering TG

〇(M1)Sora Kurabayashi¹, Kosuke Nagashio^1,2 (1.Tokyo Univ., 2.PRESTO-JST)

Keywords:MoS2,CVD,Dual gate

The PL peak for CVD MoS₂ is narrower than that for mechanically-exfoliated one, which generally suggests that the films are typically of high quality comparable to mechanically-exfoliated one. The mobility for CVD MoS₂, however, is always lower than that for mechanically-exfoliated one. It is suggested that this discrepancy results from the interaction between MoS₂ and SiO₂ substrate.
In this study, we investigated the interaction with substrate of CVD MoS₂ by measuring Raman and PL before and after transfer to a new substrate. Finally we fabricated dual-gate FETs, using transferred CVD MoS₂, then characterized the electrical transport properties.