[20p-S422-1~18] 13.5 Semiconductor devices and related technologies

[20p-S422-14] A tunnel high-electron mobility transistor (t-HEMT)

〇Katsuhiro Tomioka^1,2, Fumiya Ishizaka¹, Junichi Motohisa¹, Takashi Fukui¹ (1.GS-IST, RCIQE, Hokkaido Univ., 2.JST-PRESTO)

Keywords:tunnel FET,III-V compound semicondutors,nanowire

In this paper, we demonstrate a tunnel high electron mobility transistor (t-HEMT) using InGaAs core-multishell nanowire/Si heterojunctions.